01249cam a2200337 i 45000010009000000050017000090070015000260080041000410100017000820200029000990200015001280200026001430200023001690400034001920500016002261000031002422450103002732640032003762640011004083000078004193360021004973370025005183380023005433470024005664900073005905000086006635040051007496500035008006500021008358560055008561755314020220608112832.0cr mn nnnaucua220608t2011    nyua   gob    001 0 eng    a  2012518419  a9781441978165 (hardback)  a144197816X  z9781441978172 (ebook)  z1441978178 (ebook)  aDLCbengerdacDLCdDLCdUIAM00aQC173.4.I571 aWalkosz, Weronika,eauthor10aAtomic scale characterization and first-principles studies of Si3N4 interfaces /cWeronika Walkosz 1aNew York :bSpringer,c2011 4c©2011  a1 online resource (xiii, 108 pages) :billustrations (some color), charts  atext2rdacontent  aunmediated2rdamedia  avolume2rdacarrier  atext filebPDF2rda0 aSpringer theses : recognizing outstanding Ph.D. research,x2190-5053  a"Doctoral thesis accepted by the University of Illinois - Chicago, Chicago, USA."  aIncludes bibliographical references and index. 0aInterfaces (Physical sciences) 0aCondensed matter41uhttp://link.springer.com/10.1007/978-1-4419-7817-2