TY  - BOOK
AU  - Ueda,Osamu
AU  - Pearton,S.J.
TI  - Materials and reliability handbook for semiconductor optical and electron devices
SN  - 9781461443360 (hardback)
AV  - TK7871.85 
PY  - 2013///
CY  - New York
PB  - Springer
KW  - Semiconductors
KW  - Materials
KW  - Reliability
KW  - Optoelectronic devices
KW  - Electronic apparatus and appliances
KW  - Optical materials
KW  - Electronic books (Form)
N1  - Includes bibliographical references and index; Materials issues and reliability of optical devices; Reliability testing of semiconductor optical devices; Mitsuo Fukuda; Failure analysis of semiconductor optical devices; Osamu Ueda and Robert W. Herrick; Failure analysis using optical evaluation technique (OBIC) of LDs and APDs for fiber optical communication; Tatsuya Takeshita; Reliability and degradation of III-V optical devices focusing on gradual degradation; Osamu Ueda; Catastrophic optical damage in high-power, broad-area laser diodes; Aland K. Chin and Rick K. Bertaska; Reliability and degradation of vertical-cavity surface-emitting lasers; Robert W. Herrick; Structural defects in GaN-based materials and their relation to GaN-based laser diodes; Shigetaka Tomiya; InGaN laser diode degradation; Piotr Perlin and ucja Marona; Radiation-enhanced dislocation glide : the current status of research; Koji Maeda; Mechanism of defect reactions in semiconductors; Yuzo Shinozuka --; Materials issues and reliability of electron devices; Reliability studies in the real world; William J. Roesch; Strain effects in AlGaN/GaN HEMTs; Min Chu, Andrew D. Koehler, Amit Gupta, Srivatsan Parthasarathy and Mehmet Onur Baykan, et al; Reliability issues in AlGaN/GaN high electron mobility transistors; E.A. Douglas, L. Liu, C.F. Lo, B.P. Gila and F. Ren, et al; GaAs device reliability : high electron mobility transistors and heterojunction bipolar transistors; F. Ren, E.A. Douglas and Stephen J. Pearton; Novel dielectrics for GaN device passivation and improved reliability; F. Ren, Stephen J. Pearton, B.P. Gila, C.R. Abernathy and R.C. Fitch; Reliability simulation; M.E. Law, M. Griglione, E. Patrick, N. Rowsey and D. Horton; The analysis of wide band gap semiconductors using Raman spectroscopy; Sukwon Choi, Eric Heller, Don Dorsey and Samuel Graham; Reliability study of InP-based HBTs operating at high current density; Yoshino K. Fukai and Kenji Kurishima
UR  - https://link.springer.com/book/10.1007/978-1-4614-4337-7
ER  -