Materials and reliability handbook for semiconductor optical and electron devices / Osamu Ueda, Stephen J. Pearton, editors
Publisher: New York : Springer, 2013Copyright date: ©2013Description: 1 online resource (xv, 616 pages) : illustrations (some color)Content type:- text
- computer
- online resource
- 9781461443360 (hardback)
- 1461443369 (hardback)
- 9781461443377 (ebook)
- 1461443377 (ebook)
- Semiconductor optical and electron devices
- TK7871.85
| Cover image | Item type | Current library | Home library | Collection | Shelving location | Call number | Materials specified | Vol info | URL | Copy number | Status | Notes | Date due | Barcode | Item holds | Item hold queue priority | Course reserves | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| e-Book | M. Kamal Hassan Library | M. Kamal Hassan Library | E-Book Collection | Web | eb TK 7871.85 U22M 2013 (Browse shelf(Opens below)) | Online Access | 11100465711 |
Includes bibliographical references and index.
Materials issues and reliability of optical devices: Reliability testing of semiconductor optical devices / Mitsuo Fukuda. Failure analysis of semiconductor optical devices / Osamu Ueda and Robert W. Herrick. Failure analysis using optical evaluation technique (OBIC) of LDs and APDs for fiber optical communication / Tatsuya Takeshita. Reliability and degradation of III-V optical devices focusing on gradual degradation / Osamu Ueda. Catastrophic optical damage in high-power, broad-area laser diodes / Aland K. Chin and Rick K. Bertaska. Reliability and degradation of vertical-cavity surface-emitting lasers / Robert W. Herrick. Structural defects in GaN-based materials and their relation to GaN-based laser diodes / Shigetaka Tomiya. InGaN laser diode degradation / Piotr Perlin and ucja Marona. Radiation-enhanced dislocation glide : the current status of research / Koji Maeda. Mechanism of defect reactions in semiconductors / Yuzo Shinozuka -- Materials issues and reliability of electron devices: Reliability studies in the real world / William J. Roesch. Strain effects in AlGaN/GaN HEMTs / Min Chu, Andrew D. Koehler, Amit Gupta, Srivatsan Parthasarathy and Mehmet Onur Baykan, et al. Reliability issues in AlGaN/GaN high electron mobility transistors / E.A. Douglas, L. Liu, C.F. Lo, B.P. Gila and F. Ren, et al. GaAs device reliability : high electron mobility transistors and heterojunction bipolar transistors / F. Ren, E.A. Douglas and Stephen J. Pearton. Novel dielectrics for GaN device passivation and improved reliability / F. Ren, Stephen J. Pearton, B.P. Gila, C.R. Abernathy and R.C. Fitch. Reliability simulation / M.E. Law, M. Griglione, E. Patrick, N. Rowsey and D. Horton. The analysis of wide band gap semiconductors using Raman spectroscopy / Sukwon Choi, Eric Heller, Don Dorsey and Samuel Graham. Reliability study of InP-based HBTs operating at high current density / Yoshino K. Fukai and Kenji Kurishima.
